Method for controlling and supervising etching processes

Details Method for controlling and supervising etching processes Method for controlling and supervising etching processes

1987-10-29

1988-08-30

Powell, Willam A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156656, 1566591, 156345, 20419233, 204298, B44C 122, C23F 102

Patent

active

047674962

ABSTRACT:
A method for controlling and supervising etching processes effected by ions, radicals, and/or neutral particles activated in a plasma includes identifying the etching rate and the final point of material erosion by the use of a reference substrate having a defined specimen geometry and situated on a moveable substrate holder in a recipient compartment or etching chamber. The electrical resistance of the specimen, which is dependent on the layer thickness of an electrically conductive layer, is measured and the measured data is transmitted in non-contacting fashion by electromagnetic radiation using pulse code modulation methods. A telemetric metrology system is used which is mounted on the moveable substrate holder as an independent unit. A process control computer supervises and, if need be, controls the etching parameters in the plasma.

REFERENCES:
patent: 4207137 (1980-06-01), Tretola
patent: 4358338 (1982-11-01), Downey et al.
patent: 4543576 (1985-09-01), Hieber et al.
patent: 4592921 (1986-06-01), Hieber et al.
patent: 4602981 (1986-07-01), Chen et al.
patent: 4622094 (1986-11-01), Otsubo
S. M. Sze, VLSI Technology, 301-307.
M. Clements, "Plasma Diagnostics with Electric Probes", Journal of Vacuum Science Technology, 15(2) Mar./Apr. 1978, pp. 193-198.

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