Etching a substrate: processes – Gas phase etching of substrate – Etching inorganic substrate
Patent
1997-10-17
2000-02-08
Utech, Benjamin
Etching a substrate: processes
Gas phase etching of substrate
Etching inorganic substrate
216 76, 216 79, 216 80, 216 81, 216 96, 216 97, 216100, 216101, H01L 21302, B44C 122
Patent
active
060224851
ABSTRACT:
A catalytic method and an apparatus for selectively removing material from a solid substrate is provided. The method comprises contacting a surface of a solid substrate with a catalyst material in the presence of a reactant under conditions effective to selectively remove material from those areas of said solid substrate in contact with said catalyst material and said reactant.
REFERENCES:
patent: 3785862 (1974-01-01), Grill
patent: 4127437 (1978-11-01), Bersin et al.
patent: 4466859 (1984-08-01), Nelson
patent: 4506005 (1985-03-01), Lis
patent: 4582581 (1986-04-01), Flanigan et al.
patent: 4968552 (1990-11-01), Linde
patent: 5032216 (1991-07-01), Felten
patent: 5135607 (1992-08-01), Hirai
patent: 5196089 (1993-03-01), Takada et al.
patent: 5328550 (1994-07-01), Graebner et al.
patent: 5680008 (1997-10-01), Brandes et al.
patent: 5713775 (1998-02-01), Geis et al.
"Catalytic Etching of Silicon In A Plasma Containing Fluorine"; Soviet Tech. Phys. Lett.; vol. 17; No. 2; pp. 151-152; Amirov, et. al, (Feb. 1991).
"Catalyzed Gaseous Etching of Silicon"; J. Appl. Phys. (1987), 62(3), pp. 1049-1053; Selamoglu et al.
Goudreau George
International Business Machines - Corporation
Shkurko, Esq. Eugene I.
Utech Benjamin
LandOfFree
Method for controlled removal of material from a solid surface does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for controlled removal of material from a solid surface, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for controlled removal of material from a solid surface will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1678246