Method for controlled doping semiconductor material with highly

Details Method for controlled doping semiconductor material with highly Method for controlled doping semiconductor material with highly

1980-03-31

1981-06-02

Lutter, Frank W.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156620, 118900, 427 85, 422250, C30B 1310, C30B 1312

Patent

active

042709725

ABSTRACT:
In conjunction with the use of a float-zone crystal grower for doping silicon, a holder for temporarily storing pellets of solid dopant is disposed outside the housing of the crystal grower. A rotatable cylinder in the holder is provided with a plurality of chambers into which charges of varying amounts of dopant may be stored. A separate charge of dopant is propelled by inert gas under pressure into the melt zone of a silicon rod in the crystal grower upon the occurrence of a specified event such as passage of time or translation of the silicon rod. The apparatus and method are particularly applicable to doping with a highly volatile dopant such as indium.

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patent: 4110586 (1978-08-01), Kohl et al.
patent: 4126509 (1978-11-01), Keller et al.
Plovnick and Schmidt, "A Dopant Injector", Published in Rev. Sci. Instrum., vol. 41, #8, Aug. 1970, pp. 1248-1249.

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