Method for controlled doping of silicon crystals by improved flo

Details Method for controlled doping of silicon crystals by improved flo Method for controlled doping of silicon crystals by improved flo

1983-10-19

1985-12-03

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156620, C30B 1310

Patent

active

045564485

ABSTRACT:
An apparatus and method are described for incorporating doping material into a single silicon crystal by an improved float zone (FZ) crystal growth method. A solid fused silica doping rod is inserted into a floating zone of molten silicon in a controlled manner, preferably via a generally radial hole through a radio-frequency induction coil. Oxygen doping, in a concentration of 1-25 ppm, is achieved by using a fused silica doping rod. N- or p-type dopants may be contained in the silica rod as impurities to provide n- or p-type doping concurrently with the oxygen doping.

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patent: 3858549 (1975-01-01), Keller
patent: 3908586 (1975-09-01), Sporrer
patent: 3954416 (1976-05-01), Keller
patent: 4044730 (1978-06-01), Rahilly
patent: 4107448 (1978-08-01), Stut
patent: 4220839 (1980-09-01), DeLeon
patent: 4352785 (1982-10-01), Schellin
patent: 4400232 (1983-08-01), Ownby et al.

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