Method for control of oxygen in silicon crystals

Details Method for control of oxygen in silicon crystals Method for control of oxygen in silicon crystals

1983-03-03

1985-10-08

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

C30B 1500

Patent

active

045458499

ABSTRACT:
An improved process is disclosed for controlling the oxygen content of a Czochralski grown silicon crystal pulled from a silicon melt contained in a silica crucible. High, uniform oxygen concentrations are achieved by attaching an additional piece of silica to the inside of the crucible bottom. Preferably the additional silica is formed from a silica rod bent to a toroid shape. The toroid has about the diameter of the crystal being pulled and is located substantially coaxial with the growing crystal.

REFERENCES:
patent: 4040895 (1977-08-01), Patrick et al.
patent: 4352784 (1982-10-01), Lin
patent: 4400232 (1983-08-01), Ownby et al.
patent: 4436577 (1984-03-01), Frederick

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