Method for continuously manufacturing a semiconductor device

Details Method for continuously manufacturing a semiconductor device Method for continuously manufacturing a semiconductor device

1993-07-27

1995-01-17

Nguyen, Nam

Fishing, trapping, and vermin destroying

437101, 437926, H01L 3118, H01L 3104, C23C 1650, C23C 1654

Patent

active

053825314

ABSTRACT:
An apparatus continuously manufactures a semiconductor device. A plurality of glow discharge regions are connected by gas gates. An enough long belt-shaped substrate having a desired width is arranged along a path in which the substrate sequentially penetrates the glow discharge regions. The belt-shaped substrate is continuously conveyed in a longitudinal direction while depositing a semiconductor layer of a conductivity type which is needed in each of the glow discharge regions, thereby continuously manufacturing the device having a semiconductor junction. A plurality of rotatable rollers are arranged in a slit-shaped separating passage of the gas gates so as to support the back surface of the belt-shaped substrate while rotating the rollers.

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patent: 4664951 (1987-05-01), Doehler
patent: 4763601 (1988-08-01), Saida et al.
patent: 4951602 (1990-08-01), Kanai

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