Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-07-08
2008-07-08
Lebentritt, Michael S. (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21230, C257SE21261
Reexamination Certificate
active
10519741
ABSTRACT:
The invention relates to a method for contacting parts of a component integrated into a semiconductor substrate (1). According to the inventive method, a first contact hole is produced in an insulating layer (2), said contact hole being then filled with contact material (16) and connected to a line. The aim of the invention is to minimise the processes required for contacting parts of a component integrated into a semiconductor substrate. To this end, the hard mask (3) used to produce the contact hole is also used to structure the line.
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Dittmar Ludwig
Gustin Wolfgang
Stegemann Maik
Dinh Thu-Juong
Infineon - Technologies AG
Lebentritt Michael S.
Slater & Matsil L.L.P.
LandOfFree
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