Method for contacting a narrow width PN junction region

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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29576W, 29580, 29591, 148187, 148191, 156648, 156646, 156653, 156657, 156662, 357 59, 357 65, 427 88, H01L 21306, H01L 744, B44C 122, B05D 512

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045071713

ABSTRACT:
A method for making contact to a narrow width PN junction region in any desired semiconductor body is described. A substantially vertical conformal conductive layer is formed over the desired PN junction region. The body is heated at a suitable temperature to cause a dopant to diffuse from the vertical conductive layer into the semiconductor body to form the narrow width PN junction region. A substantially horizontal conductive layer makes contact to the substantially vertical layer so as to have the horizontal conductive layer in electrical contact to the PN junction region. Electrical contact can be made to the horizontal conductive layer at any convenient location. A lateral PNP transistor is one type of very small device that can be made using the method of the present invention.

REFERENCES:
patent: 3460007 (1969-08-01), Scott, Jr.
patent: 3484313 (1969-12-01), Tauchi et al.
patent: 3664896 (1972-05-01), Duncan
patent: 3978515 (1976-08-01), Evans et al.
patent: 4209350 (1980-06-01), Ho et al.
patent: 4236294 (1980-12-01), Anantha et al.

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