Method for contact between two conductive or semi-conductive lay

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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Details

156656, 156657, 1566591, 156662, 357 71, 437191, 437195, 437228, 437233, H01L 21306, B44C 122, C03C 1500, C23F 102

Patent

active

048774839

ABSTRACT:
A method of contact between two conductive or semiconductive layers deposited on a substrate is disclosed. The method comprises the following steps:

REFERENCES:
patent: 4397887 (1983-08-01), Aytac et al.
patent: 4423547 (1984-01-01), Farrar et al.
patent: 4518629 (1985-05-01), Jeuch
Self-Aligned Transistor with Sidewall Base Electrode, Kakamura et al., IEEE Transactions on Electron Devices, vol. ED-29, No. 4, Apr. 1982, pp. 596-600.

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