Method for constructing ferroelectric capacitors on integrated c

Details Method for constructing ferroelectric capacitors on integrated c Method for constructing ferroelectric capacitors on integrated c

1994-06-07

1995-09-26

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430311, 430313, 430329, 437189, 437228, 216 40, 216 48, G03F 726, H01L 2100

Patent

active

054533473

ABSTRACT:
A ferroelectric capacitor and method for making the same are disclosed. The ferroelectric capacitor may be constructed on a silicon substrate such as SiO.sub.2 or Si.sub.3 N.sub.4. The ferroelectric capacitor includes a bottom electrode, a layer of ferroelectric material, and a top electrode. The bottom electrode is constructed from a layer of platinum which is bonded to the silicon substrate by a layer of metallic oxide. The metallic oxide does not diffuse into the platinum; hence, a thinner layer of platinum may be utilized for the electrode. This reduces the vertical height of the capacitor and other problems associated with diffusion of the layer used to bond the bottom electrode to the substrate surface.

REFERENCES:
patent: 5242534 (1993-09-01), Bullington
patent: 5258093 (1993-11-01), Manier

Affiliated with

Also associated with

Rating

Method for constructing ferroelectric capacitors on integrated c does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for constructing ferroelectric capacitors on integrated c, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for constructing ferroelectric capacitors on integrated c will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1551443