Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Having enclosed cavity
Reexamination Certificate
2008-07-08
2008-07-08
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Having enclosed cavity
C257S730000, C257SE23127
Reexamination Certificate
active
07396741
ABSTRACT:
A process for joining substrates having electrical, semiconducting, mechanical and/or optical components, and to a composite element is provided. The process is to be suitable for substrates that are to be joined substantially irrespective of material and for sensitive substrates. According to the process, a raised frame, in particular formed from anodically bondable glass, is applied by evaporation coating to one of the two substrates in order to serve as a joining element.
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XP-10232226A-1, Anodic Bonding Technique Under Low-Temperature and Low-Voltage Using Evaporated Glass, Woo-Beom Choi et al., 9thInt'l Vacuum Microelectronics Conference, St. Petersburg 1996, pp. 427-430.
International Preliminary Examination Report dated May 6, 2005.
Leib Jürgen
Mund Dietrich
Ohlandt Greeley Ruggiero & Perle L.L.P.
Schott AG
Wilczewski M.
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