Method for conditioning a microelectronics device deposition...

Details Method for conditioning a microelectronics device deposition... Method for conditioning a microelectronics device deposition...

2007-06-07

2009-10-13

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S197000, C438S903000, C257SE21054, C257SE21174, C257SE21293, C257SE21632

Reexamination Certificate

active

07601639

ABSTRACT:
The present invention provides, in one aspect, the present invention provides, in one embodiment, a method of conditioning a deposition chamber100. This method comprises placing an undercoat on the walls of a deposition chamber100and depositing a pre-deposition coat over the undercoat with a plasma gas mixture conducted at a high pressure and with high gas flow.

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patent: 5017403 (1991-05-01), Pang et al.
patent: 6326597 (2001-12-01), Lubomirsky et al.
patent: 7001491 (2006-02-01), Lombardi et al.
patent: 7241690 (2007-07-01), Pavone et al.
patent: 2004/0061118 (2004-04-01), Yamazaki et al.

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