Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-07-10
2007-07-10
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S197000, C438S903000, C257SE21054, C257SE21174, C257SE21293, C257SE21632
Reexamination Certificate
active
11103860
ABSTRACT:
The present invention provides, in one aspect, a method of conditioning a deposition chamber 100. An undercoat is placed on the walls of a deposition chamber 100 and a pre-deposition coat is deposited over the undercoat with a plasma gas mixture conducted at a high pressure and with high gas flow.
REFERENCES:
patent: 4563367 (1986-01-01), Sherman et al.
patent: 5017403 (1991-05-01), Pang et al.
patent: 6326597 (2001-12-01), Lubomirsky et al.
patent: 7001491 (2006-02-01), Lombardi et al.
patent: 2004/0061118 (2004-04-01), Yamazaki et al.
New Jason J.
Pavone Salvator F.
Brady, III W James
Garner Jacqueline J.
Nhu David
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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