Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2006-08-24
2008-08-05
Pham, Thanh Van (Department: 2823)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S455000, C438S458000, C438S459000, C438S471000, C438S473000, C438S475000, C257SE21122
Reexamination Certificate
active
07407867
ABSTRACT:
A method for producing a semiconductor structure that includes at least one useful layer on a substrate. This method includes providing a source substrate with a zone of weakness therein that defines a relatively thick useful layer between the zone of weakness and a front face of the source substrate; bonding the front face of the source substrate to a support substrate and detaching the useful layer from the source substrate at the zone of weakness to transfer the useful layer to the support substrate; implanting atomic species into a free face of the useful layer to a controlled mean implantation depth therein to form a zone of weakness within the useful layer that defines front and rear useful layers, with the rear useful layer contacting the source substrate and the front useful layer containing a greater concentration of defects; bonding a stiffening substrate to the free face of the front useful layer after implantation of the atomic species; and detaching the front useful layer from the rear useful layer along the zone of weakness to form a semiconductor structure comprising the support substrate and the rear useful layer thereon. The structures obtained can be used in the fields of electronics, optoelectronics or optics.
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Aulnette Cécile
Bataillou Benoît
Ghyselen Bruno
Mazure Carlos
Moriceau Hubert
Commissariat à l'Energie Atomique (CEA)
Pham Thanh Van
S.O.I.Tec Silicon on Insulator Technologies
Winston & Strawn LLP
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