Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2006-10-03
2006-10-03
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C257SE21122, C257SE21319, C257SE21568, C438S977000, C438S508000, C438S508000, C438S508000
Reexamination Certificate
active
07115481
ABSTRACT:
A method for concurrently producing at least a pair of semiconductor structures that each include at least one useful layer on a substrate. The method includes providing an initial structure that includes a useful layer having a front face on a support substrate. Atomic species are implanted into the useful layer to a controlled mean implantation depth to form a zone of weakness within the useful layer that defines first and second useful layers. Next, a stiffening substrate is bonded to the front face of the initial structure. The first useful layer is then detached from the second useful layer along the zone of weakness to obtain a pair of semiconductor structures with a first structure including the stiffening substrate and the first useful layer and a second structure including the support substrate and the second useful layer. The structures obtained can be used in the fields of electronics, optoelectronics or optics.
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Aulnette Cécile
Bataillou Benoit
Ghyselen Bruno
Mazure Carlos
Moriceau Hubert
Commissariat à l'Energie Atomique (CEA)
Pham Thanh V.
S.O.I.Tec Silicon on Insulator Technologies S.A.
Smith Matthew
Winston & Strawn LLP
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