Method for compensated sensing in non-volatile memory

Details Method for compensated sensing in non-volatile memory Method for compensated sensing in non-volatile memory

2008-01-29

2008-01-29

Phung, Anh (Department: 2824)

Static information storage and retrieval

Read/write circuit

Flip-flop used for sensing

C365S207000, C365S189011, C365S189070, C365S185210

Reexamination Certificate

active

07324393

ABSTRACT:
One or more sense amplifiers for sensing the conduction current of non-volatile memory is controlled by signals that are timed by a reference sense amplifier having similar characteristics and operating conditions. In one aspect, a sensing period is determined by when the reference sense amplifier sensing a reference current detects an expected state. In another aspect, an integration period for an amplified output is determined by when the reference sense amplifier outputs an expected state. When these determined timings are used to control the one or more sense amplifiers, environment and systemic variations are tracked.

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