Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2005-12-06
2005-12-06
Smith, Brad (Department: 2829)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
C438S933000, C438S938000
Reexamination Certificate
active
06972245
ABSTRACT:
One embodiment of the present invention provides a system for co-fabricating strained and relaxed crystalline, poly-crystalline, and amorphous structures in an integrated circuit device using common fabrication steps. The system operates by first receiving a substrate. The system then fabricates multiple layers on this substrate. A layer within these multiple layers includes both strained structures and relaxed structures. These strained structures and relaxed structures are fabricated simultaneously using common fabrication steps.
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Hunt Charles E.
Peterson Jeffrey J.
Grundler Edward J.
Park Vaughan & Fleming LLP
Smith Brad
The Regents of the University of California
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