Method for CMP with variable down-force adjustment

Semiconductor device manufacturing: process – Chemical etching

Reexamination Certificate

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Details

C438S692000, C438S691000, C257SE21304

Reexamination Certificate

active

07344987

ABSTRACT:
The present invention relates to a method for performing chemical mechanical polishing. A high down-force step is performed. A low down-force step is performed. At least one of the down-force steps is modified, based on if one of the down-force steps exceeds an acceptable tolerance associated therewith. Other systems and methods are also disclosed.

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“Introduction to Copper/Low-K Interconnects & Electromigration Fundamentals”, Alvin L.S. Loke, and Tin Tin Wee, IEEE Solid State Circuits Society, Sep. 12, 2003, 21 pgs.

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