Method for CMP cleaning improvement

Cleaning and liquid contact with solids – Processes – Including application of electrical radiant or wave energy...

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216 89, 438693, H01L 21304, H01L 2130

Patent

active

057097550

ABSTRACT:
Using an APM solution to clean both the front and backside of a semiconductor wafer significantly reduces the residue from chemical mechanical polishing. A low residue count holds the wafer more securely to the electrostatic chuck, thus improving processing, reducing wear on the electrostatic chuck, and increasing its lifetime.

REFERENCES:
patent: 5317778 (1994-06-01), Kudo et al.
patent: 5320706 (1994-06-01), Blackwell
patent: 5441591 (1995-08-01), Imthurn et al.
patent: 5606251 (1997-02-01), Ryle et al.
"Mechanical Brush Scrubbing for Post-CMP Clean"; Krussell et al.; Solid State Tech., vol. 38, No. 6, pp. 109-114; Jun. 1995.

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