Method for cleaning waste matter from the backside of a semicond

Details Method for cleaning waste matter from the backside of a semicond Method for cleaning waste matter from the backside of a semicond

1997-08-20

1999-09-28

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

438692, 438906, 438928, H01L 2128, H01L 2131, H01L 213205

Patent

active

059587962

ABSTRACT:
A method for manufacturing a semiconductor device on a wafer that has a substrate with a front side and a backside, and an accumulation of waste matter on the backside of the substrate. In a method of the invention, a cover layer is deposited over the front side in a normal coating step of a process for fabricating a component on the wafer. The cover layer provides material used in the process for fabricating the component on the front side of the wafer and creates a barrier over the front side. The waste matter is removed from the backside of the wafer by etching the waste matter from the backside of the wafer with a suitable etchant, or by planarizing the backside of the wafer with a chemical-mechanical planarization ("CMP") process. During the removal step, the cover layer protects the front side and any device features on the front side from being damaged while the waste matter is removed from the backside of the wafer. Since the cover layer is deposited in a normal coating step of the process for fabricating a component on the wafer, it is deposited irrespective of whether the waste matter is removed from the wafer.

REFERENCES:
patent: 5223734 (1993-06-01), Lowrey et al.
patent: 5461002 (1995-10-01), Safir
patent: 5716873 (1998-02-01), Prall et al.

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