Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Patent
1996-12-06
2000-04-25
Chang, Joni
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
438240, H01L 2100
Patent
active
060543280
ABSTRACT:
This invention relates to a method for improving the chemical and electrical performance characteristics of a high dielectric constant material. The method comprises the steps of first obtaining a barium containing high dielectric constant material, the material having an upper surface and then modifying the surface chemistry of said upper surface by interacting said upper surface with a gas reactant in a closed environment. In a variant of the method, the gas reactant preferentially reacting with upper surface as compared to the bulk.
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Duncombe Peter R.
Kotecki David E.
Laibowitz Robert B.
Natzle Wesley
Yu Chienfan
Chang Joni
International Business Machines - Corporation
Townsend Tiffany L.
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