Method for cleaning substrate processing chamber

Details Method for cleaning substrate processing chamber Method for cleaning substrate processing chamber

2003-11-14

2008-11-25

Deo, Duy-vu N. (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S706000, C438S009000, C438S723000, C438S726000, C438S727000, C216S037000, C216S067000, C134S001100, C134S022100, C134S022180

Reexamination Certificate

active

07456109

ABSTRACT:
A cleaning method of a substrate processor that reduces damage to a member in a substrate processing container. The method of cleaning the substrate processing container of the substrate processor that processes a target substrate according to the present invention includes: introducing gas into a remote plasma generating unit of the substrate processor; exciting the gas by the remote plasma generating unit, and generating reactive species; and supplying the reactive species to the processing container from the remote plasma generating unit, and pressurizing the processing container at 1333 Pa or greater.

REFERENCES:
patent: 5788778 (1998-08-01), Shang et al.
patent: 6068729 (2000-05-01), Shrotriya
patent: 10/149989 (1998-06-01), None
patent: 2000-353683 (2000-12-01), None
patent: 2002-184765 (2002-06-01), None
patent: 2002-280376 (2002-09-01), None
patent: 2004-179426 (2004-06-01), None
patent: 02/078073 (2002-10-01), None

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