Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-04-10
1999-10-05
Chaudhan, Chandra
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438694, H01L 2144
Patent
active
059638338
ABSTRACT:
A low temperature in-situ precleaning process for a semiconductor surface is disclosed. Ambient reactant gases, such as NF.sub.3 and GeH.sub.4, having a partial pressure of between approximately 10.sup.-8 and 700 Torr, are pulsed in a batch furnace at temperatures in the approximate range of 250 to 950 degrees Celsius and pressure in the approximate range of 4.times.10.sup.3 to 20.times.10.sup.3 Torr. This forms material on the surface that easily vaporizes in that temperature and pressure range, providing a clean surface for formation of the next layer. A similar in-situ cleaning process is performed at temperature ranges of between approximately 300 to 1,000 degrees Celsius for the equipment utilized in processing semiconductor substrates.
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Berry Renee R.
Chaudhan Chandra
Micro)n Technology, Inc.
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