Method for cleaning semiconductor devices

Cleaning compositions for solid surfaces – auxiliary compositions – Cleaning compositions or processes of preparing – For cleaning a specific substrate or removing a specific...

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510480, 134 2, 134 3, C11D 904, C11D 337, C03C 2300, C23G 102

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059623845

ABSTRACT:
A method is provided for treating a plurality of semiconductor substrates using the same aqueous SC-1 solution which solution removes and/or inhibits contamination of the semiconductor surfaces by metallic ions present in the solution or on the substrate surface comprising a basic solution containing hydrogen peroxide and an oxidation-resistant chelating additive such as CDTA in an amount effective to provide the desired treatment results. The SC-1 solution may be the conventional 5:1:1 (water:NH.sub.4 OH:H.sub.2 O.sub.2) solution or a dilute solution such as a 5:x:1 to 200:x:1 solution wherein x is 0.025 to 2.

REFERENCES:
patent: 5290361 (1994-03-01), Hayashida et al.
patent: 5302311 (1994-04-01), Sugihara et al.
patent: 5478436 (1995-12-01), Winebarger et al.
J. Electrochem. Soc., "Thin-Oxide Dielectric Strength Improvement by Adding a Phosphonic Acid Chelating Agent into NH.sub.4 OH-H.sub.2 O.sub.2 Solution", vol. 141, No. 10, Oct. 1994, pp. L139-L142.
Hideo Akiya et al, J. Electrochem. Soc., "Thin-Oxide Dielectric Strength Improvement . . . ", vol. 141, No. 10, Oct. 1994, pp. L139-L142, ACS Abstract.

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