Method for cleaning reaction container and film deposition...

Details Method for cleaning reaction container and film deposition... Method for cleaning reaction container and film deposition...

2002-03-08

2009-06-16

Ahmed, Shamim (Department: 1792)

Cleaning and liquid contact with solids

Processes

Hollow work, internal surface treatment

C134S002000, C134S011000, C134S019000, C134S035000, C216S058000, C216S067000, C438S905000, C438S906000

Reexamination Certificate

active

07546840

ABSTRACT:
After semiconductor wafers are loaded into a reaction vessel, and ruthenium (Ru) film or ruthenium oxide film is formed, the interior of the reaction vessel is efficiently cleaned without contaminating the wafers. The interior of the reaction vessel is heated to a temperature of above 850° C. while the pressure inside the reaction vessel is reduced to, e.g., 133 pa (1 Torr)-13.3 Kpa (100 Torr), and oxygen gas is fed into the reaction vessel at a flow rate of, e.g., above 1.5 Lm, whereby the ruthenium film or the ruthenium oxide film formed inside the reaction vessel is cleaned off. In place of oxygen gas, active oxygen, such as O3, O* and OH*, etc. may be used.

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D. Choi, et al., “Cleaning Technique of Hot-wall Batch Type Ru CVD Equipment by Oxygen Gas”, IEEE International Symposium on Semiconductor Manufacturing, Conference Proceedings, Oct. 8, 2001, pp. 301-304.

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