Method for cleaning reaction chambers by plasma etching

Details Method for cleaning reaction chambers by plasma etching Method for cleaning reaction chambers by plasma etching

1993-01-14

1994-01-25

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

134 1, 156657, 156668, B44C 122, B29C 3700, C03C 1500, C03C 2506

Patent

active

052813029

ABSTRACT:
For cleaning parasitic layers of silicon oxides or nitrides in a reaction chamber, an etching gas mixture is employed in which at least one fluoridated carbon, particularly CF.sub.4 and/or C.sub.2 F.sub.6, is the main constituent. Then, an ozone/oxygen mixture (O.sub.3 /O.sub.2) having optimally high ozone concentration is added to the reaction chamber. The etching gas mixture is excited in the reaction chamber by triggering the etching gas mixture to form a plasma, having extremely low power with an excitation frequency in the RF range. The etching gas mixture etches all surfaces in the reaction chambers free of residues with a high etching rate.

REFERENCES:
patent: 4529474 (1985-07-01), Fujiyama et al.
patent: 4885047 (1989-12-01), Ury et al.
patent: 5158644 (1992-10-01), Cheug et al.

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