Method for cleaning an EUV lithography device, method for...

Optics: measuring and testing – With plural diverse test or art

Reexamination Certificate

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C356S316000

Reexamination Certificate

active

07911598

ABSTRACT:
Components (30) in the interior of an EUV lithography device for extreme ultraviolet and soft X-ray wavelength range are cleaned by igniting a plasma, adjacent to the component (30) to be cleaned, using electrodes (29), wherein the electrodes (29) are adapted to the form of the component (30) to be cleaned. The residual gas atmosphere is measured spectroscopically on the basis of the plasma. An emission spectrum is preferably recorded in order to monitor the degree of cleaning. An optical fiber cable (31) with a coupling-in optical unit (32) is advantageously used for this purpose. Moreover, in order to monitor the contamination in the gas phase within the vacuum chambers during the operation of an EUV lithography device, it is proposed to provide modules configured to initiate a gas discharge and to detect radiation emitted on account of the gas discharge. The contamination in the gas phase can be deduced from the analysis of the measured spectrum.

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Cleaning of Contaminated XUV-optics at Bessy II, F. Eggenstein et al., Nuclear Instruments & Methods in Physics Research, Section A (467-468), pp. 325-328, Elsevier Science B.V., 2001.

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