Cleaning and liquid contact with solids – Processes – Including application of electrical radiant or wave energy...
Reexamination Certificate
2007-04-24
2007-04-24
Barr, Michael (Department: 1746)
Cleaning and liquid contact with solids
Processes
Including application of electrical radiant or wave energy...
C134S022100, C134S026000, C134S902000, C438S905000
Reexamination Certificate
active
10738740
ABSTRACT:
A method for plasma cleaning a CVD reactor chamber including providing a plasma enhanced CVD reactor chamber comprising residual deposited material; performing a first plasma process comprising an oxygen containing plasma; performing a second plasma process comprising an argon containing plasma; and, performing a third plasma process comprising a fluorine containing plasma.
REFERENCES:
patent: 5620526 (1997-04-01), Watatani et al.
patent: 5882423 (1999-03-01), Linn et al.
patent: 6584987 (2003-07-01), Cheng et al.
patent: 6767836 (2004-07-01), San et al.
patent: 6843858 (2005-01-01), Rossman
Chang Hung-Jui
Chen Sheng-Wen
Jangjian Shiu-Ko
Wang Ying-Lang
Barr Michael
Chaudhry Saeed
Taiwan Semiconductor Manufacturing Co. Ltd.
Tung & Associates
LandOfFree
Method for cleaning a plasma enhanced CVD chamber does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for cleaning a plasma enhanced CVD chamber, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for cleaning a plasma enhanced CVD chamber will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3740612