Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2005-12-22
2009-02-24
Souw, Bernard E (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492100, C250S50400H, C250S372000, C216S067000, C216S076000, C216S081000, C156S345290, C156S345350, C134S001100, C117S097000, C117S103000, C117S105000, C117S108000, C427S533000, C427S534000, C427S569000, C427S595000, C257SE21245, C257SE21252, C257SE21256
Reexamination Certificate
active
07495239
ABSTRACT:
A cleaning arrangement for a lithographic apparatus module may be provided in a collector. The cleaning arrangement includes a hydrogen radical source configured to provide a hydrogen radical containing gas to at least part of the module and a pump configured to pump gas through the module such that a flow speed of the hydrogen radical containing gas provided through at least part of the module is at least 1 m/s. The cleaning arrangement may also include a gas shutter configured to modulate a flow of the hydrogen radical containing gas to at least part of the module, a buffer volume of at least 1 m3in communication with the module, and a pump configured to provide a gas pressure in the buffer volume between 0.001 mbar (0.1 Pa) and 1 mbar (100 Pa).
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Banine Vadim Yevgenyevich
Freriks Johannes Maria
Ivanov Vladimir Vital'evitch
ASML Netherlands B.V.
Souw Bernard E
Sterne Kessler Goldstein & Fox P.L.L.C.
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