Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1996-07-22
1999-01-26
McCamish, Marion
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
438692, 438691, 216100, 216102, 216105, 216 89, 216 95, C23F 318, H05K 326
Patent
active
058638385
ABSTRACT:
A method of manufacturing a semiconductor device includes providing (51) a substrate (19), providing (52) a colloid (17) having particles held in suspension, providing (53) a reagent (18), disposing (54) the substrate (19) in a processing tool (10), combining (55) the colloid (17) and the reagent (18) to form a slurry (28), decomposing (56) the reagent (18) into a surfactant and an oxidizer, using (57) the slurry (28) to process the substrate (19) in the processing tool (10), and removing (58) the substrate (19) from the processing tool (10).
REFERENCES:
patent: 5084071 (1992-01-01), Nenadic et al.
patent: 5139571 (1992-08-01), Deal et al.
patent: 5225034 (1993-07-01), Yu et al.
patent: 5391258 (1995-02-01), Brancaleoni et al.
patent: 5527423 (1996-06-01), Neville et al.
S.P.Muraka, et al., "Advanced Metallization for Devices and Circuits--Science, Technology and Manufacturability", Mat.,Res.Soc.Symp.Proc., vol. 337, Apr. 4-8, 1994, pp. 133-138.
Ronald Carpio, et al., "Initial study on copper CMP slurry chemistries", Sematech, Thin Solid Films 266 (1995), pp. 238-244.
F.B.Kaufman, et al., "Chemical-Mechanical Polishing for Fabricating Patterned W Metal Features as Chip Interconnects", J.Electrochem, Soc., vol. 138, No. 11, Nov. 1991, pp. 3460-3465.
Farkas Janos
Freeman Melissa
Juska Cheryl
McCamish Marion
Meyer George R.
Motorola Inc.
LandOfFree
Method for chemically-mechanically polishing a metal layer does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for chemically-mechanically polishing a metal layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for chemically-mechanically polishing a metal layer will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1450180