Method for chemically-mechanically polishing a metal layer

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

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438692, 438691, 216100, 216102, 216105, 216 89, 216 95, C23F 318, H05K 326

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058638385

ABSTRACT:
A method of manufacturing a semiconductor device includes providing (51) a substrate (19), providing (52) a colloid (17) having particles held in suspension, providing (53) a reagent (18), disposing (54) the substrate (19) in a processing tool (10), combining (55) the colloid (17) and the reagent (18) to form a slurry (28), decomposing (56) the reagent (18) into a surfactant and an oxidizer, using (57) the slurry (28) to process the substrate (19) in the processing tool (10), and removing (58) the substrate (19) from the processing tool (10).

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Ronald Carpio, et al., "Initial study on copper CMP slurry chemistries", Sematech, Thin Solid Films 266 (1995), pp. 238-244.
F.B.Kaufman, et al., "Chemical-Mechanical Polishing for Fabricating Patterned W Metal Features as Chip Interconnects", J.Electrochem, Soc., vol. 138, No. 11, Nov. 1991, pp. 3460-3465.

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