Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-09-25
2007-09-25
Fourson, George R. (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S620000, C427S096800, C427S097200, C427S097700, C427S124000, C427S294000, C257SE21585
Reexamination Certificate
active
11169244
ABSTRACT:
A method of depositing conformal film into high aspect ratio spaces includes the step of forming a gradient of precursor gas inside the space(s) prior to deposition. The gradient may be formed, for example, by reducing the pressure within the deposition chamber or by partial evacuation of the deposition chamber. The temperature of the substrate is then briefly increased to preferentially deposit precursor material within the closed or “deep” portion of the high aspect ratio space. The process may be repeated for a number of cycles to completely fill the space(s). The process permits the filling of high aspect ratio spaces without any voids or keyholes that may adversely impact the performance of the resulting device.
REFERENCES:
patent: 6551399 (2003-04-01), Sneh et al.
patent: 7135421 (2006-11-01), Ahn et al.
patent: 2005/0011457 (2005-01-01), Chiang et al.
patent: 2005/0095872 (2005-05-01), Belyansky et al.
Fourson George R.
Maldonado Julio J.
The Regents of the University of California
Vista IP Law Group LLP
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