Method for chemical mechanical polishing for fabricating...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Mesa formation

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S054000, C438S692000, C438S693000

Reexamination Certificate

active

06955935

ABSTRACT:
Disclosure is a method for a chemical mechanical polishing process for fabricating a semiconductor device. The method for performing the chemical mechanical polishing process for a copper layer on a semiconductor wafer comprises the steps of: performing the chemical mechanical polishing process for the copper layer on the semiconductor wafer by using slurry; performing a standstill process in a middle of the chemical mechanical polishing process; and carrying out the chemical mechanical polishing process again after performing the standstill process.

REFERENCES:
patent: 6634930 (2003-10-01), Chen et al.
patent: 6733685 (2004-05-01), Beilin et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for chemical mechanical polishing for fabricating... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for chemical mechanical polishing for fabricating..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for chemical mechanical polishing for fabricating... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3469092

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.