Method for chemical mechanical polishing a semiconductor device

Details Method for chemical mechanical polishing a semiconductor device Method for chemical mechanical polishing a semiconductor device

1994-03-04

2000-02-22

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438692, 156633, 156636, B44C 122, H01L 21306

Patent

active

060279974

ABSTRACT:
Conductive plugs (28) are formed in a semiconductor device (10) using a chemical mechanical polishing (CMP) process. A blanket conductive layer (26), for example of tungsten, is deposited in a plug opening (24). The conductive layer is polished back by CMP using a slurry comprised of either copper sulfate (CuSO.sub.4) or copper perchlorate [Cu(ClO.sub.4).sub.2 ] and an abrasive, such as alumina or silica, and water. In another embodiment, a CMP process using such slurries may be used to form conductive interconnects (50) in a semiconductor device (40).

REFERENCES:
patent: 3385682 (1968-05-01), Lowen
patent: 4475981 (1984-10-01), Red
patent: 4491500 (1985-01-01), Michaud et al.
patent: 4944836 (1990-07-01), Beyer et al.
patent: 4956313 (1990-09-01), Cote et al.
patent: 4959113 (1990-09-01), Roberts
patent: 4992135 (1991-02-01), Doan
patent: 5222329 (1993-06-01), Yu
patent: 5244534 (1993-09-01), Yu et al.
patent: 5340370 (1994-08-01), Codien et al.

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