Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1996-08-13
1998-06-02
Dang, Thi
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
B24B 100
Patent
active
057599181
ABSTRACT:
A method and apparatus is disclosed for polishing the face of a semiconductor wafer. The wafer is held in position by a tooling head and is contacted by an abrasive pad. A table is provided on to which the abrasive pad is fixedly attached, both of which move in directions parallel to the face of the wafer being polished. A controller controls the motion of the table according to a predetermined polishing pattern and is capable of maintaining a constant velocity between the wafer and the abrasive pad. The tooling head includes a circular platen and a retention ring peripherally oriented about the outer edge of the platen which resists lateral forces on the wafer caused by engagement of the face of the wafer with the polishing surface. An adjustable coupling is mounted to the platen and the ring, and serves to adjustably position during polishing the height of the ring relative to the face of the wafer as well as to rigidly support during polishing the position of the retaining ring. A flexible disk is fixedly mounted between a support post and the platen and oriented substantially parallel to the face of the platen. The flexible disk is adapted to prevent rotation of the platen about the axis of the support post and to transmit forces between the platen and the post in directions parallel to the face of the platen.
REFERENCES:
patent: 1577137 (1926-03-01), Maynard
patent: 3518798 (1970-07-01), Boettcher
patent: 3667661 (1972-06-01), Farmer
patent: 3730410 (1973-05-01), Altshuler
patent: 3906678 (1975-09-01), Roth
patent: 4282924 (1981-08-01), Faretra
patent: 4313284 (1982-02-01), Walsh
patent: 4344160 (1982-08-01), Gabriel et al.
patent: 4425038 (1984-01-01), La Fiandra et al.
patent: 4508161 (1985-04-01), Holden
patent: 4793895 (1988-12-01), Kaanta et al.
patent: 4930262 (1990-06-01), Sennewald
patent: 4954142 (1990-09-01), Carr et al.
patent: 5036630 (1991-08-01), Kaanta et al.
patent: 5193316 (1993-03-01), Olmstead
patent: 5205082 (1993-04-01), Shendon et al.
patent: 5230184 (1993-07-01), Bukhman
patent: 5232875 (1993-08-01), Tuttle et al.
patent: 5267418 (1993-12-01), Currie et al.
patent: 5335453 (1994-08-01), Baldy et al.
patent: 5352249 (1994-10-01), Vollaro
patent: 5377451 (1995-01-01), Leoni et al.
patent: 5476548 (1995-12-01), Lei et al.
patent: 5487697 (1996-01-01), Jensen
patent: 5549511 (1996-08-01), Cronin et al.
Buhler James D.
de Geus Richard
Hollywood William K.
Hoshizaki Jon A.
Lee Lawrence L.
Dang Thi
Obsidian Inc.
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