Method for chemical mechanical planarization of chalcogenide...

Details Method for chemical mechanical planarization of chalcogenide... Method for chemical mechanical planarization of chalcogenide...

2011-03-29

2011-03-29

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S102000, C257SE21214, C257SE21230

Reexamination Certificate

active

07915071

ABSTRACT:
A method and associated composition for chemical mechanical planarization of a chalcogenide-containing substrate (e.g., germanium/antimony/tellurium (GST)-containing substrate) are described. The composition and method afford low defect levels (e.g., scratches incurred during polishing) as well as low dishing and local erosion levels on the chalcogenide-containing substrate during CMP processing.

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