Electric lamp and discharge devices: systems – Discharge device load with fluent material supply to the... – Plasma generating
Patent
1995-02-03
1997-12-09
Pascal, Robert
Electric lamp and discharge devices: systems
Discharge device load with fluent material supply to the...
Plasma generating
31511141, 31511181, 31323131, 118723AN, H05H 146, B08B 700
Patent
active
056964293
ABSTRACT:
Contaminants are cleaned from the surface of a body in space by generating a substantially space-charge neutral reactive plasma, directing the plasma onto the contaminated surface at an energy below the surface sputtering energy (typically 20 eV), and reacting the plasma with the contaminants to remove them. A helicon wave plasma source is made light weight and compact enough for spacecraft use, with a plasma energy low enough to avoid damaging optical surfaces, by using permanent magnets to establish a static axial magnetic field, and a simple but novel rf antenna design. The antenna consists of a pair of spaced conductive rings which extend around the plasma tube, with conductive base and rf feed bars extending between the rings on diametrically opposite sides. The feed bar is interrupted to provide an rf input on opposite sides of the interruption. The antenna is preferably formed as an integral metal unit, with its rings rigidly supported by and integral with opposite ends of the base bar. The plasma source is also useful in neutralizing localized charges on the spacecraft.
REFERENCES:
patent: 4088926 (1978-05-01), Fletcher
patent: 4800281 (1989-01-01), Williamson
patent: 4846425 (1989-07-01), Champetier
patent: 4977352 (1990-12-01), Williamson
patent: 5418431 (1995-05-01), Williamson
Chen, "Plasma Ionization by Helicon Waves", Plasma Physics and Controlled Fusion, vol. 33, No. 4, 1991, pp. 339-364.
Singer, "Trends in Plasma Sources: The Search Continues" Semiconductor International, Jul. 1992, pp. 52-57.
Watari et al., "Radio Frequency Plugging of a High Density Plasma", Physics of Fluids, vol. 21, No. 11, Nov. 1978, pp. 2076-2081.
"Adapting Military Technology to Civilian Use: Contamination Removal and Collection Techniques", Microcontamination May 1993, pp. 21-27.
"Ion Cleaning of Silicone-Based Contaminants", J. F. Froechtenigt, et al., 1989 IEEE, pp. 393-398.
"On-orbit Ion Cleaning of Cryogenic Optical Surfaces", B. Lippey et al., SPIE vol. 1754 Optical System Contamination (1992) pp. 314-323.
Patent Abstracts of Japan, vol. 14, No. 455 (E-985) Sep. 28, 1990 & JP-A-02 183 531 (Osaka Titanium) Jul. 18, 1990, abstract.
Patent Abstracts of Japan, vol. 13, No. 134 (C-581) Apr. 4, 1989 & JP-A-63 297 547 (Nippon T&T) Dec. 5, 1988, abstract.
Patent Abstracts of Japan, vol. 12, No. 82 (C-481) Mar. 15, 1988 & JP-A-62 216 638 (Anelva) Sep. 24, 1987, abstract.
Lippey Barret
Williams John D.
Williamson Weldon S.
Denson-Low W. K.
Duraiswamy V. D.
Hughes Aircraft Company
Kinkead Arnold
Pascal Robert
LandOfFree
Method for charge neutralization of surface in space with space- does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for charge neutralization of surface in space with space-, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for charge neutralization of surface in space with space- will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1610230