Method for characterizing the oxygen contents of Czochralski gro

Details Method for characterizing the oxygen contents of Czochralski gro Method for characterizing the oxygen contents of Czochralski gro

1980-06-09

1982-08-17

Bernstein, Hiram

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156617SP, C30B 1500

Patent

active

043448151

ABSTRACT:
The oxygen content of Czochralski grown silicon rods is characterized by annealing portions of the rods at selected times and temperatures and measuring the resistivity shift which is then related to the oxygen content of that portion of the rod. The rod can be selected for use in unipolar or bipolar device manufacture prior to cutting the rod into wafers.

REFERENCES:
patent: 3725148 (1973-04-01), Kendall
patent: 4140570 (1979-02-01), Voltmer et al.
patent: 4220483 (1980-09-01), Cazcarra
S. M. Hu et al., "Gettering by Oxygen Precipitation," IBM TDB, vol. 19, No. 12, May 1977, pp. 4618-4619.
F. W. Voltmer et al., "Anomalous Resistivity Profiles in Long Silicon Crystals Grown by the Czochralski Method", Journal of Crystal Growth, vol. 19, No. 3, 1973, pp. 215-217.
R. B. Herring, "Silicon Wafer Technology-State of the Art 1976," Solid State Technology, vol. 19, No. 5, May 1976, pp. 37-42, 54.
C. S. Fuller et al., "Interactions Between Oxygen and Acceptor Elements in Silicon," Journal of Applied Physics, vol. 29, No. 8, 1958, pp. 1264-1265.
G. Bemski et al., "Quenched-In Defects in p-Type Silicon," Journal of Applied Physics, vol. 35, No. 10, 1964, pp. 2983-2985.
Wouters et al., "The Electrical Conductivity of Silicon Between 500.degree. C. and 1200.degree. C.," Philips Research Reports, vol. 31, No. 3, 1976, pp. 278-283.
K. Yamamoto et al., "Lifetime Improvement in Czochralski-Grown Silicon Wafers by the Use of a Two-Step Annealing," Applied Physics Letters, vol. 36, No. 3, 1980, pp. 195-197.
A. Murgai et al., "Effect of Microscopic Growth Rate on Oxygen Microsegregation and Swirl Defect Distribution in Czochralski-Grown Silicon," Journal of the Electrochemical Society, vol. 126, No. 12, 1979, pp. 2240-2245.

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