Method for carbon film production

Details Method for carbon film production Method for carbon film production

1987-01-28

1991-12-17

Nguyen, Nam X.

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419225, 20419226, 20419228, C23C 1434

Patent

active

050732412

ABSTRACT:
A carbon film producing method utilizing a reactive sputtering process for projecting carbon particles from a graphite target electrode to deposite a very thin layer on a substrate. The reactive sputtering process is performed at a predetermined pressure in an atmosphere of hydrogen gas mixed at a predetermined ratio to another kind of gas.

REFERENCES:
patent: 3840451 (1974-10-01), Golyanov et al.
patent: 4365015 (1982-12-01), Kitajima et al.
patent: 4414085 (1983-11-01), Wickersham et al.
patent: 4486286 (1984-12-01), Levin et al.
patent: 4597844 (1986-07-01), Hiraki et al.
McKenzie et al., "Hydrogenated . . . mixtures", Applied Optics, Oct. 1982, vol. 21, No. 20, pp. 3615-3617.
Hiraki et al., "Tetrahedral . . . Substrate", Solid State Communications, vol. 50, No. 8, pp. 713-716, 1984.

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