Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Plural fluid growth steps with intervening diverse operation
Reexamination Certificate
2005-08-02
2005-08-02
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Plural fluid growth steps with intervening diverse operation
C438S907000, C073S223000
Reexamination Certificate
active
06924214
ABSTRACT:
In a method for calculating a time-related fill level signal (h(t)) from a sensor signal (s(t)) of a fill level sensor for detection of the fill level of a liquid, the time-related fill level signal (h(t)) is calculated as a function of the sensor signal (s(t)) and the modeled runoff behavior of the liquid on the fill level sensor.
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Dang Phuc T.
Kenyon & Kenyon
Robert & Bosch GmbH
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