Method for buried contact isolation in SRAM devices

Details Method for buried contact isolation in SRAM devices Method for buried contact isolation in SRAM devices

Filed on

1996-06-07

Date issued

1997-01-14

Examiner

Tsai, H. Jey

Patent Class

Fishing, trapping, and vermin destroying

Other Related Categories

437 52, 148DIG20, H01L 2144, H01L 2160

Type

Patent

Status

active

Patent number

055939228

Description

ABSTRACT:
A method for fabrication of polysilicon buried contacts is described which overcomes the problems of current leakage which occur at sub-micron spacings between these contacts. The failure of the conventional channel stop protection at these spacings is compensated for by performing the buried contact anti-punchthrough ion-implant using large-angle-tilt (LAT) implantation. This provides adequate dopant under the edge of the field oxide to eliminate excessive current leakages between buried contacts at sub-micron spacings. The method is particularly effective in the manufacture of static random access memories (SRAMs) where such sub-micron spacings occur to a large degree.

REFERENCES:
patent: 4804636 (1989-02-01), Groover, III et al.
patent: 5240874 (1993-08-01), Roberts
patent: 5272099 (1993-12-01), Chou et al.
patent: 5439835 (1995-08-01), Gonzalez
patent: 5521113 (1996-05-01), Hsue et al.

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