Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch
Patent
1996-09-20
1997-08-26
Monin, Donald
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
With lattice constant mismatch
257627, H01L 21302
Patent
active
056613164
ABSTRACT:
A method for forming an ohmic interface between unipolar (isotype) compound semiconductor wafers without a metallic interlayer and the semiconductor devices formed with these ohmic interfaces are disclosed. The ohmic interface is formed by simultaneously matching the crystallographic orientation of the wafer surfaces and the rotational alignment within the surfaces of the two wafers and then subjecting them to applied uniaxial pressure under high temperatures to form the bonded ohmic interface. Such an ohmic interface is required for the practical implementation of devices wherein electrical current is passed from one bonded wafer to another.
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Kish, Jr. Fred A.
Vanderwater David A.
Hewlett--Packard Company
Monin Donald
Penn Jonathan B.
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