Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2001-12-11
2003-10-28
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C438S459000, C438S977000
Reexamination Certificate
active
06638835
ABSTRACT:
FIELD OF THE INVENTION
An embodiment of the present invention relates generally to integrated circuit fabrication. More particularly, an embodiment of the present invention relates to debonding a thin semiconductor layer and bonding it to a transfer substrate.
BACKGROUND OF THE INVENTION
Description of Related Art
Thin semiconductor layers (sometimes referred to as epitaxial (EPI) wafers) are used to control the detrimental effects of resistance-capacitance (RC) that occur in semiconductor devices. One challenge with thin semiconductor layers is their high cost. To that end, one solution has been to debond a semiconductive layer from its formerly integral substrate and to bond it to another substrate that provides an RC advantage over the prior art. A high-cost, and high yield-loss disadvantage is the processing needed to get a smooth enough surface from the debonded semiconductive layer to allow for efficient bonding to another semiconductive structure.
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Colinge Cindy
Doyle Brian
Roberds Brian
Jr. Carl Whitehead
Smoot Stephen W.
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