Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2006-04-06
2009-12-22
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S406000, C438S464000, C257SE21088, C257SE21510
Reexamination Certificate
active
07635635
ABSTRACT:
A method of bonding a semiconductor substrate to a metal substrate is disclosed. In some embodiments the method includes forming a semiconductor device in a semiconductor substrate, the semiconductor device comprising a first surface. The method further includes obtaining a metal substrate. The metal substrate is bonded to the first surface of the semiconductor device, wherein at least a portion of the metal substrate forms an electrical terminal for the semiconductor device.
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Li Minhua
Wang Qi
Wu Chung-Lin
Yilmaz Hamza
Fairchild Semiconductor Corporation
Nguyen Ha Tran T
Townsend and Townsend / and Crew LLP
Whalen Daniel
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