Method for blocking dislocation propagation of semiconductor

Details Method for blocking dislocation propagation of semiconductor Method for blocking dislocation propagation of semiconductor

2011-05-17

2011-05-17

Garber, Charles (Department: 2812)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C438S029000, C438S046000, C438S082000, C438S478000, C438S483000, C257SE21125, C257SE21158, C257SE21318

Reexamination Certificate

active

07943494

ABSTRACT:
The present invention provides a method for blocking the dislocation propagation of a semiconductor. A semiconductor layer is formed by epitaxial process on a substrate. A plurality of recesses is formed on the semiconductor layer by etching fragile locations of the semiconductor layer where dislocation occurs. Thereafter, a blocking layer is formed on each of the plurality of recesses. The aforesaid semiconductor layer undergoes epitaxial process again on the aforesaid semiconductor layer, and laterally overgrows to redirect the dislocation defects.

REFERENCES:
patent: 2004/0067648 (2004-04-01), Morita et al.
patent: 2006/0035447 (2006-02-01), Ikeda et al.
patent: 2009/0294860 (2009-12-01), Mowry et al.
patent: 561632 (2003-11-01), None
patent: 242898 (2005-11-01), None
Bell et al. Light Emission and Microstructure of Mg-doped AIGaN grown on Patterned sapphire, Jan. 20, 2003, Applied Physics Letters, vol. 82, No. 3.
Shuji et al. InGaN/GaN/AIGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate, Jan. 12, 1998, AppLied Physics Letter. 72 (2).

Affiliated with

Also associated with

Rating

Method for blocking dislocation propagation of semiconductor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for blocking dislocation propagation of semiconductor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for blocking dislocation propagation of semiconductor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2656232