Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design
Reexamination Certificate
2006-08-29
2009-02-24
Whitmore, Stacy A (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Nanotechnology related integrated circuit design
C716S030000
Reexamination Certificate
active
07496862
ABSTRACT:
This invention discloses a method for automatically adjusting cell layout height and transistor width of one type of MOS IC cells, the method comprising following steps of Boolean logic operations on at least one such cell: identifying one or more MOS transistor active areas (ODs) and one or more power ODs in an OD layer, expanding the MOS transistor ODs in a predetermined direction by a first predetermined amount, shifting the power ODs in the predetermined direction by a second predetermined amount, expanding one or more MOS transistor gate areas in the predetermined direction by a third predetermined amount, shifting one or more power OD contacts in the predetermined direction by approximately the second predetermined amount, and stretching one or more metal areas (M1s) in a metal layer that is directly coupled to the OD layer through contacts electronically, in the predetermined direction by a predetermined way.
REFERENCES:
patent: 5625568 (1997-04-01), Edwards et al.
patent: 2007/0113216 (2007-05-01), Zhang
Chang Mi-Chang
Lin Su-Ya
Tien Li-Chun
Yang Jen-Hang
Dimyan Magid Y
K & L Gates LLP
Taiwan Semiconductor Manufacturing Co. Ltd.
Whitmore Stacy A
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