Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with subsequent...
Patent
1997-06-26
1999-10-05
Teska, Kevin J.
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from gaseous state combined with subsequent...
438468, 438927, 257767, G06F 1750
Patent
active
059637293
ABSTRACT:
An automated method detects electromigration violations in an integrated circuit design. Starting from the lowest hierarchy of the design so far completed, the parasitic (resistance and capacitance) component values extracted from a layout file are propagated up. Then, at the top-most level, lumping algorithms are employed to calculate the parasitic values for all of the top-most level nets. These values are then passed back down to the lower levels and then at each level, the layout is checked using previously computed parasitic values and EM limits. A peak current, AC-average current and AC-rms current are calculated for every layout, and then compared with the process EM rules for violations, in which the optimum line width and number of vias are specified for each interconnection.
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Aji Sandeep A.
Doreswamy Manjunath
Konstadinidis Georgios
Kik Phallaka
Sun Microsystems Inc.
Teska Kevin J.
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