Method for attenuating photoresist layer outgassing

Details Method for attenuating photoresist layer outgassing Method for attenuating photoresist layer outgassing

1997-04-07

1999-01-12

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430327, 430494, 25049221, 427525, 427526, 438373, G03F 700

Patent

active

058586237

ABSTRACT:
A method for forming a patterned photoresist layer. There is first provided a substrate. There is then formed over the substrate a blanket photoresist layer. The blanket photoresist layer is then implanted with a first ion beam to form an ion implanted blanket photoresist layer. The first ion beam employs a first ion having a first energy and a first dose sufficient such that an ion implanted patterned photoresist layer formed from the ion implanted blanket photoresist layer will not substantially outgas when the ion implanted patterned photoresist layer is exposed to a second beam. The ion implanted blanket photoresist layer is then patterned to form the ion implanted patterned photoresist layer. The method may be employed in selective high energy beam processing of the substrate. The method is particularly suited to selective high energy ion implant processing of semiconductor substrates employed within integrated circuit microelectronics fabrications.

REFERENCES:
patent: 4851691 (1989-07-01), Hanley

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