Static information storage and retrieval – Read/write circuit – Erase
Patent
1994-03-07
1994-11-29
Nguyen, Viet Q.
Static information storage and retrieval
Read/write circuit
Erase
365201, 365900, 371 216, G06F 1316
Patent
active
053696166
ABSTRACT:
A method for insuring that an erase operation practiced on a block of flash EEPROM transistors is carried out reliably including the steps of: writing whenever the erasure of a block of the flash EEPROM array is to commence to a position in the array to indicate that an erasure of the block has commenced, writing whenever the erasure of a block of the flash EEPROM array is complete to the position in the array to indicate that an erasure of the block has been completed, testing to determine any positions in the array which indicate that an erasure of a block has commenced but not been completed upon applying power to the flash EEPROM array, and reinitiating an erase if any positions in the array exist which indicate that an erasure of a block has commenced but not been completed.
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Solid-State Mass Storage Arrives, Product Feature, Memory Card Systems & Design, Jul./Aug. 1992.
Magnusson Eric J.
Wells Steven E.
Intel Corporation
Nguyen Viet Q.
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