Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-01-16
2007-01-16
Ahmed, Shamim (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S714000, C438S715000, C438S716000, C438S738000, C216S096000, C216S103000, C216S104000, C216S106000, C356S036000
Reexamination Certificate
active
10637073
ABSTRACT:
The invention provides a method of assaying at least one element in a material including silicon. The method includes the steps of decomposing a portion of the material with an etching agent to form a solution containing hexafluorosilicic acid and at least one element to be assayed, heating the solution to a temperature sufficient to transform a substantial portion of the hexafluorosilicic acid into silicon tetrafluoride and to cause at least some of the silicon tetrafluoride to evaporate, such that a solution for assaying is obtained in which the silicon content is reduced while and the elements to be assayed are conserved; and assaying at least one element contained in the solution. The invention is applicable to the field of manufacturing substrates or components for optics, electronics, or optoelectronics, and in particular to the field of quality control.
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Ahmed Shamim
Angadi Maki
S.O.I.Tec Silicon on Insulator Technologies S.A.
Winston & Strawn LLP
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