Method for ashing a photoresist resin film on a semiconductor wa

Details Method for ashing a photoresist resin film on a semiconductor wa Method for ashing a photoresist resin film on a semiconductor wa

1995-05-08

1997-10-14

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Removal of imaged layers

134 1, 1566431, G03F 742

Patent

active

056771134

ABSTRACT:
The object of the invention is to provide an ashing method and an asher in order to avoid damage to semiconductor components occurring during ashing of a photoresist resin film by active oxygen plasma and to avoid a long treatment time occurring in an ashing method using a low pressure mercury discharge lamp. According to the invention, this object is achieved by a method and an apparatus for ashing a photoresist resin film. In the method, a wafer provided with a photoresist resin film is placed in an ozone-containing atmosphere. An activated oxygen is produced through the radiation light of a discharge lamp, which emits a continuous spectrum in a wavelength range of 200 to 300 nm. The photoresist resin film is ashed by the activated oxygen.

REFERENCES:
patent: 3890176 (1975-06-01), Bolon
patent: 4756047 (1988-07-01), Hayashi
patent: 4885047 (1989-12-01), Ury et al.
patent: 5176782 (1993-01-01), Ishibashi
Extended Abstracts of the 15th Conf. on Solid State Devices and Materials, 1983, "UV Resist-Stripping for High-Speed and Damage-Free Process", Tokyo, Japan, pp. 125-128, Ozawa et al.

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